Part Details for 1MBI200SA-120 by Fuji Electric Co Ltd
Overview of 1MBI200SA-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 1MBI200SA-120
1MBI200SA-120 CAD Models
1MBI200SA-120 Part Data Attributes:
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1MBI200SA-120
Fuji Electric Co Ltd
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Datasheet
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1MBI200SA-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | COLLMER SEMICONDUCTOR INC | |
Package Description | FLANGE MOUNT, R-XUFM-X5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 300 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JESD-30 Code | R-XUFM-X5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Element Material | SILICON |
Alternate Parts for 1MBI200SA-120
This table gives cross-reference parts and alternative options found for 1MBI200SA-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI200SA-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MG500Q1US21 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200SA-120 vs MG500Q1US21 |
CM100DY-24H | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | 1MBI200SA-120 vs CM100DY-24H |
2MBI100S-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | 1MBI200SA-120 vs 2MBI100S-120 |
MG600Q1US65H | TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200SA-120 vs MG600Q1US65H |
FZ400R12KS4HOSA1 | Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | 1MBI200SA-120 vs FZ400R12KS4HOSA1 |
MG500Q1US2 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200SA-120 vs MG500Q1US2 |
1MBI300L-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | 1MBI200SA-120 vs 1MBI300L-120 |
2MBI150NB-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 1MBI200SA-120 vs 2MBI150NB-120 |
MG150Q2YS91 | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200SA-120 vs MG150Q2YS91 |
1MBI300S-120 | Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | 1MBI200SA-120 vs 1MBI300S-120 |