Part Details for 1MBI200N-120 by Fuji Electric Co Ltd
Overview of 1MBI200N-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Part Details for 1MBI200N-120
1MBI200N-120 CAD Models
1MBI200N-120 Part Data Attributes:
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1MBI200N-120
Fuji Electric Co Ltd
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Datasheet
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1MBI200N-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND CURRENT LIMITING CIRCUIT | |
| Fall Time-Max (tf) | 500 ns | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1600 W | |
| Power Dissipation-Max (Abs) | 1600 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 850 ns | |
| Turn-on Time-Nom (ton) | 650 ns | |
| VCEsat-Max | 3.3 V |
Alternate Parts for 1MBI200N-120
This table gives cross-reference parts and alternative options found for 1MBI200N-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI200N-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CM200HA-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | 1MBI200N-120 vs CM200HA-24H |
| 2MBI150S-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | 1MBI200N-120 vs 2MBI150S-120 |
| CM200DU-24F | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | 1MBI200N-120 vs CM200DU-24F |
| CM200HA-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | Powerex Power Semiconductors | 1MBI200N-120 vs CM200HA-24H |
| CM200DY-24H | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | 1MBI200N-120 vs CM200DY-24H |
| 2MBI200NB-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 1MBI200N-120 vs 2MBI200NB-120 |
| MG200Q2YS1 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | 1MBI200N-120 vs MG200Q2YS1 |
| 1MBI200NA-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M130, 5 PIN | Fuji Electric Co Ltd | 1MBI200N-120 vs 1MBI200NA-120 |
| 2MBI200LB-060 | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | 1MBI200N-120 vs 2MBI200LB-060 |
| 2MBI150U4H-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | 1MBI200N-120 vs 2MBI150U4H-120 |