Datasheets
1MBI200L-120 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN

Part Details for 1MBI200L-120 by Fuji Electric Co Ltd

Overview of 1MBI200L-120 by Fuji Electric Co Ltd

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Part Details for 1MBI200L-120

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1MBI200L-120 Part Data Attributes:

1MBI200L-120 Fuji Electric Co Ltd
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1MBI200L-120 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M116, 4 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-XUFM-X4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH SWITCHING SPEED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1500 ns
Turn-on Time-Nom (ton) 800 ns

Alternate Parts for 1MBI200L-120

This table gives cross-reference parts and alternative options found for 1MBI200L-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI200L-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CM200HA-24H Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, Mitsubishi Electric 1MBI200L-120 vs CM200HA-24H
2MBI150S-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, Fuji Electric Co Ltd 1MBI200L-120 vs 2MBI150S-120
CM200DU-24F Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors 1MBI200L-120 vs CM200DU-24F
CM200HA-24H Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel Powerex Power Semiconductors 1MBI200L-120 vs CM200HA-24H
CM200DY-24H Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors 1MBI200L-120 vs CM200DY-24H
2MBI200NB-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd 1MBI200L-120 vs 2MBI200NB-120
MG200Q2YS1 TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components 1MBI200L-120 vs MG200Q2YS1
1MBI200NA-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M130, 5 PIN Fuji Electric Co Ltd 1MBI200L-120 vs 1MBI200NA-120
2MBI200LB-060 Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, Fuji Electric Co Ltd 1MBI200L-120 vs 2MBI200LB-060
2MBI150U4H-120 Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Fuji Electric Co Ltd 1MBI200L-120 vs 2MBI150U4H-120

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