Datasheets
1MB30-060 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN

Part Details for 1MB30-060 by Fuji Electric Co Ltd

Overview of 1MB30-060 by Fuji Electric Co Ltd

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Available Datasheets

Part # Manufacturer Description Datasheet
G801MB303018THR Amphenol Communications Solutions Board mount - Header Plug - Pin Header 2.54mm Pitch Right Angle,SMT,1x5Pin,Gold Flash,LCP,With Located Post
G801MB300018EU Amphenol Communications Solutions Board mount - Header Plug - Pin Header 2.54mm Pitch Right Angle,SMT,1x8Pin,Gold Flash,NY6T,With Located Post
G801MB303018EU Amphenol Communications Solutions Board mount - Header Plug - Pin Header 2.54mm Pitch Right Angle,SMT,1x5Pin,Gold Flash,NY6T,With Located Post

Part Details for 1MB30-060

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1MB30-060 Part Data Attributes

1MB30-060 Fuji Electric Co Ltd
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1MB30-060 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer COLLMER SEMICONDUCTOR INC
Part Package Code TO-3P
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW SATURATION VOLTAGE
Collector Current-Max (IC) 48 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 300 ns
Turn-on Time-Nom (ton) 160 ns

Alternate Parts for 1MB30-060

This table gives cross-reference parts and alternative options found for 1MB30-060. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MB30-060, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1MB20D-060 Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd 1MB30-060 vs 1MB20D-060
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation 1MB30-060 vs SGP13N60UF
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation 1MB30-060 vs HGTG30N60C3
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation 1MB30-060 vs HGTP12N60D1
SGB15N60HS Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3 Infineon Technologies AG 1MB30-060 vs SGB15N60HS
APT30GP60SG Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D3PAK, 3 PIN Microsemi Corporation 1MB30-060 vs APT30GP60SG
MGP14N60E 18A, 600V, N-CHANNEL IGBT, TO-220AB, CASE 221A-09, 3 PIN onsemi 1MB30-060 vs MGP14N60E
IRG4BC20W-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG 1MB30-060 vs IRG4BC20W-S
IXDA20N120AS Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 IXYS Corporation 1MB30-060 vs IXDA20N120AS
SGW15N120 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG 1MB30-060 vs SGW15N120

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