Part Details for 1MB15D-060 by Fuji Electric Co Ltd
Overview of 1MB15D-060 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Part Details for 1MB15D-060
1MB15D-060 CAD Models
1MB15D-060 Part Data Attributes
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1MB15D-060
Fuji Electric Co Ltd
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Datasheet
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1MB15D-060
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 33A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Part Package Code | TO-3P | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW SATURATION VOLTAGE | |
| Collector Current-Max (IC) | 33 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 350 ns | |
| Gate-Emitter Thr Voltage-Max | 8.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 120 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 600 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 300 ns | |
| Turn-on Time-Nom (ton) | 160 ns |
Alternate Parts for 1MB15D-060
This table gives cross-reference parts and alternative options found for 1MB15D-060. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MB15D-060, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 1MB20D-060 | Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | 1MB15D-060 vs 1MB20D-060 |
| SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | 1MB15D-060 vs SGP13N60UF |
| HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | 1MB15D-060 vs HGTG30N60C3 |
| HGTP12N60D1 | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | 1MB15D-060 vs HGTP12N60D1 |
| SGB15N60HS | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3 | Infineon Technologies AG | 1MB15D-060 vs SGB15N60HS |
| APT30GP60SG | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D3PAK, 3 PIN | Microsemi Corporation | 1MB15D-060 vs APT30GP60SG |
| MGP14N60E | 18A, 600V, N-CHANNEL IGBT, TO-220AB, CASE 221A-09, 3 PIN | onsemi | 1MB15D-060 vs MGP14N60E |
| IRG4BC20W-S | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | 1MB15D-060 vs IRG4BC20W-S |
| IXDA20N120AS | Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | IXYS Corporation | 1MB15D-060 vs IXDA20N120AS |
| SGW15N120 | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | 1MB15D-060 vs SGW15N120 |