Datasheets
1DI200Z-120 by: Fuji Electric Co Ltd

Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, M106, 4 PIN

Part Details for 1DI200Z-120 by Fuji Electric Co Ltd

Overview of 1DI200Z-120 by Fuji Electric Co Ltd

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Part Details for 1DI200Z-120

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1DI200Z-120 Part Data Attributes:

1DI200Z-120 Fuji Electric Co Ltd
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1DI200Z-120 Fuji Electric Co Ltd Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, M106, 4 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJI ELECTRIC CO LTD
Package Description FLANGE MOUNT, R-XUFM-X4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
Fall Time-Max (tf) 2000 ns
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1400 W
Power Dissipation-Max (Abs) 1400 W
Qualification Status Not Qualified
Rise Time-Max (tr) 3000 ns
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 17000 ns
Turn-on Time-Max (ton) 3000 ns
VCEsat-Max 2.8 V

Alternate Parts for 1DI200Z-120

This table gives cross-reference parts and alternative options found for 1DI200Z-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1DI200Z-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
1DI200A-120 Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin Fuji Electric Co Ltd 1DI200Z-120 vs 1DI200A-120
QM200HA-24 Power Bipolar Transistor, 200A I(C), 3-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, Mitsubishi Electric 1DI200Z-120 vs QM200HA-24
1DI200A-140 Power Bipolar Transistor, 200A I(C), 1400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 6 Pin Fuji Electric Co Ltd 1DI200Z-120 vs 1DI200A-140

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