Part Details for 1N8176USE3 by Microsemi Corporation
Overview of 1N8176USE3 by Microsemi Corporation
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for 1N8176USE3
1N8176USE3 CAD Models
1N8176USE3 Part Data Attributes
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1N8176USE3
Microsemi Corporation
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1N8176USE3
Microsemi Corporation
Trans Voltage Suppressor Diode
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | MELF-2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Breakdown Voltage-Min | 104 V | |
| Clamping Voltage-Max | 152 V | |
| Configuration | SINGLE | |
| Diode Capacitance-Min | 4 pF | |
| Diode Element Material | SILICON | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| JESD-30 Code | O-LELF-R2 | |
| Non-rep Peak Rev Power Dis-Max | 150 W | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Polarity | UNIDIRECTIONAL | |
| Power Dissipation-Max | 1 W | |
| Rep Pk Reverse Voltage-Max | 94 V | |
| Reverse Current-Max | 0.5 µA | |
| Reverse Test Voltage | 94 V | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |