1N6280AE3/TR12
Microsemi Corporation
Description: Trans Voltage Suppressor Diode, 20.5V V(RWM), Unidirectional,

Overview of 1N6280AE3/TR12 by Microsemi Corporation

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

Part # Manufacturer Description Datasheet
0805HT-R12TGBB Coilcraft Inc General Purpose Inductor, 0.12uH, 2%, 1 Element, Ceramic-Core, SMD, 0806, CHIP
1008HT-R12TGLB Coilcraft Inc General Purpose Inductor, 0.12uH, 2%, 1 Element, Ceramic-Core, SMD, 2520, CHIP, 2520, ROHS COMPLIANT
1008HT-R12TGBC Coilcraft Inc General Purpose Inductor, 0.12uH, 2%, 1 Element, Ceramic-Core, SMD, 1010, CHIP

CAD Models for 1N6280AE3/TR12 by Microsemi Corporation
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Part Data Attributes for 1N6280AE3/TR12 by Microsemi Corporation

1N6280AE3/TR12
Microsemi Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
MICROSEMI CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Nom
24 V
Clamping Voltage-Max
33.2 V
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Polarity
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
20.5 V
Surface Mount
NO
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  1. 1N6280AE3/TR12
    Microsemi Corporation
    Trans Voltage Suppressor Diode, 20.5V V(RWM), Unidirectional,
    VS

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