Part Details for 1N5457B by International Semiconductor Inc
Overview of 1N5457B by International Semiconductor Inc
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Part Details for 1N5457B
1N5457B CAD Models
1N5457B Part Data Attributes
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1N5457B
International Semiconductor Inc
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1N5457B
International Semiconductor Inc
Variable Capacitance Diode, 120pF C(T), 30V, Silicon, DO-7
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL SEMICONDUCTOR INC | |
| Package Description | O-LALF-W2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Breakdown Voltage-Min | 30 V | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Cap Tolerance | 5% | |
| Diode Capacitance Ratio-Min | 2.7 | |
| Diode Capacitance-Nom | 120 pF | |
| Diode Element Material | SILICON | |
| Diode Type | VARIABLE CAPACITANCE DIODE | |
| JEDEC-95 Code | DO-7 | |
| JESD-30 Code | O-LALF-W2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Power Dissipation-Max | 0.4 W | |
| Qualification Status | Not Qualified | |
| Quality Factor-Min | 150 | |
| Rep Pk Reverse Voltage-Max | 30 V | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Variable Capacitance Diode Classification | ABRUPT |