Part Details for 1N4935GA0G by Taiwan Semiconductor
Overview of 1N4935GA0G by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for 1N4935GA0G
1N4935GA0G CAD Models
1N4935GA0G Part Data Attributes:
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1N4935GA0G
Taiwan Semiconductor
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Datasheet
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1N4935GA0G
Taiwan Semiconductor
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Package Description | DO-41, 2PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | HIGH RELIABILITY | |
Application | EFFICIENCY | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.2 V | |
JEDEC-95 Code | DO-204AL | |
JESD-30 Code | O-PALF-W2 | |
JESD-609 Code | e3 | |
Non-rep Pk Forward Current-Max | 30 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 1 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Peak Reflow Temperature (Cel) | 260 | |
Rep Pk Reverse Voltage-Max | 200 V | |
Reverse Current-Max | 5 µA | |
Reverse Recovery Time-Max | 0.2 µs | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Time@Peak Reflow Temperature-Max (s) | 10 |
Alternate Parts for 1N4935GA0G
This table gives cross-reference parts and alternative options found for 1N4935GA0G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N4935GA0G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1N4003GHR1G | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN | Taiwan Semiconductor | 1N4935GA0G vs 1N4003GHR1G |
1N4935G | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 | Lite-On Semiconductor Corporation | 1N4935GA0G vs 1N4935G |
UF102G_AY_00001 | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, | PanJit Semiconductor | 1N4935GA0G vs UF102G_AY_00001 |
1N4935-LF | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 | Won-Top Electronics Co Ltd | 1N4935GA0G vs 1N4935-LF |
1N4003G-T3 | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 | Won-Top Electronics Co Ltd | 1N4935GA0G vs 1N4003G-T3 |
FR103 | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, | Formosa Microsemi Co Ltd | 1N4935GA0G vs FR103 |
1SR35-200AVS | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, GLASS PACKAGE-2 | ROHM Semiconductor | 1N4935GA0G vs 1SR35-200AVS |
1N4003.TR | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, | Fairchild Semiconductor Corporation | 1N4935GA0G vs 1N4003.TR |
1N4003 | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 | TDK Micronas GmbH | 1N4935GA0G vs 1N4003 |
1N4003GR1G | Rectifier Diode, | Taiwan Semiconductor | 1N4935GA0G vs 1N4003GR1G |