Datasheets
1N4448WG by:

Rectifier Diode,

Part Details for 1N4448WG by Galaxy Microelectronics

Overview of 1N4448WG by Galaxy Microelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for 1N4448WG

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1N4448WG Part Data Attributes

1N4448WG Galaxy Microelectronics
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1N4448WG Galaxy Microelectronics Rectifier Diode,
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Application FAST RECOVERY
Breakdown Voltage-Min 75 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G2
Non-rep Pk Forward Current-Max 1 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.25 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 0.4 W
Rep Pk Reverse Voltage-Max 75 V
Reverse Current-Max 2.5 µA
Reverse Recovery Time-Max 0.004 µs
Reverse Test Voltage 75 V
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL

Alternate Parts for 1N4448WG

This table gives cross-reference parts and alternative options found for 1N4448WG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N4448WG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
1N4448W Galaxy Microelectronics Check for Price Rectifier Diode, 1N4448WG vs 1N4448W

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