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Overview of 1N4448WG by Galaxy Microelectronics
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for 1N4448WG by Galaxy Microelectronics
Part Data Attributes for 1N4448WG by Galaxy Microelectronics
|
|
---|---|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.10.00.70
|
Application
|
FAST RECOVERY
|
Breakdown Voltage-Min
|
75 V
|
Configuration
|
SINGLE
|
Diode Element Material
|
SILICON
|
Diode Type
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF)
|
1.25 V
|
JESD-30 Code
|
R-PDSO-G2
|
Non-rep Pk Forward Current-Max
|
1 A
|
Number of Elements
|
1
|
Number of Phases
|
1
|
Number of Terminals
|
2
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-65 °C
|
Output Current-Max
|
0.25 A
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Power Dissipation-Max
|
0.4 W
|
Rep Pk Reverse Voltage-Max
|
75 V
|
Reverse Current-Max
|
2.5 µA
|
Reverse Recovery Time-Max
|
0.004 µs
|
Reverse Test Voltage
|
75 V
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|