Part Details for 1214GN-400LV by Microchip Technology Inc
Overview of 1214GN-400LV by Microchip Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Price & Stock for 1214GN-400LV
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
150-1214GN-400LV-ND
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DigiKey | RF MOSFET HEMT 50V 55-KR Lead time: 52 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now |
Part Details for 1214GN-400LV
1214GN-400LV CAD Models
1214GN-400LV Part Data Attributes
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1214GN-400LV
Microchip Technology Inc
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Datasheet
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1214GN-400LV
Microchip Technology Inc
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 150 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 250 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 800 W | |
| Power Gain-Min (Gp) | 16 dB | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Element Material | GALLIUM NITRIDE |