Datasheets
1214-110M by:
Microsemi Corporation
MACOM
Microchip Technology Inc
Microsemi Corporation
TE Connectivity
Not Found

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETC SEALED PACKAGE-3

Part Details for 1214-110M by Microsemi Corporation

Results Overview of 1214-110M by Microsemi Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

1214-110M Information

1214-110M by Microsemi Corporation is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
CMT1-2.1-4L Coilcraft Inc Single Phase EMI Filter, ROHS COMPLIANT PACKAGE-4
MSS5121-473MLC Coilcraft Inc General Purpose Inductor, 47uH, 20%, 1 Element, Ferrite-Core, SMD, 2020, ROHS COMPLIANT
MSS5121-473MLB Coilcraft Inc General Purpose Inductor, 47uH, 20%, 1 Element, Ferrite-Core, SMD, 2020, ROHS COMPLIANT

Price & Stock for 1214-110M

Part # Distributor Description Stock Price Buy
Vyrian NPN, Configuration: SINGLE, Surface Mount: YES, Maximum Power Dissipation (Abs): 270 W, Maximum ... Collector Current (IC): 8 A, Package Style (Meter): FLANGE MOUNT, more 137
RFQ

Part Details for 1214-110M

1214-110M CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

1214-110M Part Data Attributes

1214-110M Microsemi Corporation
Buy Now Datasheet
Compare Parts:
1214-110M Microsemi Corporation RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, HERMETC SEALED PACKAGE-3
Select a part to compare:
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Package Description HERMETC SEALED PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Microsemi Corporation
Case Connection BASE
Collector Current-Max (IC) 8 A
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 270 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

1214-110M Related Parts

1214-110M Frequently Asked Questions (FAQ)

  • Microsemi recommends a 4-layer PCB with a solid ground plane, and a separate power plane for the VCC and VEE pins. Additionally, keep the input and output traces short and away from noise sources.

  • The 1214-110M requires a dual power supply with VCC = +5V and VEE = -5V. Ensure the power supply is well-regulated and decoupled with 0.1uF and 10uF capacitors.

  • The 1214-110M is rated for operation from -40°C to +85°C. However, it's recommended to derate the device for reliable operation above 70°C.

  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Ensure the PCB design includes a clear path to ground for ESD discharge.

  • The 1214-110M is designed for input signals with amplitudes up to 2Vpp and frequencies up to 100MHz. However, the device can handle higher frequencies with reduced amplitude.