Part Details for 0912GN-50LE by Microchip Technology Inc
Overview of 0912GN-50LE by Microchip Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Industrial Automation
Price & Stock for 0912GN-50LE
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
150-0912GN-50LE-ND
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DigiKey | RF MOSFET GAN 50V 55-QQP Lead time: 52 Weeks Container: Bulk | Temporarily Out of Stock |
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Part Details for 0912GN-50LE
0912GN-50LE CAD Models
0912GN-50LE Part Data Attributes
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0912GN-50LE
Microchip Technology Inc
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Datasheet
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0912GN-50LE
Microchip Technology Inc
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 150 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | S-XDSO-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 200 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 100 W | |
Power Gain-Min (Gp) | 15.2 dB | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM NITRIDE |