ZXMN2A04DN8TC vs PMWD30UN,518 feature comparison

ZXMN2A04DN8TC Diodes Incorporated

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PMWD30UN,518 NXP Semiconductors

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer DIODES INC NXP SEMICONDUCTORS
Part Package Code SOT TSSOP
Package Description SO-8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8 8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOW THRESHOLD
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 30 V
Drain Current-Max (ID) 5.9 A 5 A
Drain-source On Resistance-Max 0.025 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
JEDEC-95 Code MO-153AB

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