ZXM62P03E6 vs FDC6312P feature comparison

ZXM62P03E6 Diodes Incorporated

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FDC6312P Rochester Electronics LLC

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ZETEX PLC ROCHESTER ELECTRONICS LLC
Package Description SMALL OUTLINE, R-PDSO-G6 SUPERSOT-6
Reach Compliance Code compliant unknown
ECCN Code EAR99
Samacsys Manufacturer Diodes Incorporated
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 20 V
Drain Current-Max (ID) 1.6 A 2.3 A
Drain-source On Resistance-Max 0.2 Ω 0.115 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 2
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
Pbfree Code Yes
Part Package Code SOT
Pin Count 6

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