ZVP1320FTA
vs
SJVP0109N9
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
ZETEX PLC
SUPERTEX INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
90 V
Drain Current-Max (ID)
0.035 A
0.25 A
Drain-source On Resistance-Max
80 Ω
8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
8 pF
JESD-30 Code
R-PDSO-G3
O-MBCY-W3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
WIRE
Terminal Position
DUAL
BOTTOM
Time@Peak Reflow Temperature-Max (s)
40
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Package Description
CYLINDRICAL, O-MBCY-W3
HTS Code
8541.29.00.95
Case Connection
DRAIN
JEDEC-95 Code
TO-52
Power Dissipation Ambient-Max
1 W
Transistor Application
SWITCHING
Compare ZVP1320FTA with alternatives
Compare SJVP0109N9 with alternatives