ZVN3320FTA vs VP2110K1-G feature comparison

ZVN3320FTA Diodes Incorporated

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VP2110K1-G Microchip Technology Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIODES INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95 8541.29.00.95
Factory Lead Time 8 Weeks 5 Weeks
Samacsys Manufacturer Diodes Incorporated Microchip
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 100 V
Drain Current-Max (ID) 0.06 A 0.12 A
Drain-source On Resistance-Max 25 Ω 12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 8 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 0.33 W 0.36 W
Power Dissipation-Max (Abs) 0.33 W 0.36 W
Pulsed Drain Current-Max (IDM) 1 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 12 ns
Turn-on Time-Max (ton) 12 ns
Base Number Matches 2 1
Additional Feature LOW THRESHOLD
JEDEC-95 Code TO-236AB
Transistor Application SWITCHING

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