ZVN2110ASTOA
vs
2N5640
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
ZETEX PLC
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
IN-LINE, R-PSIP-W3
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
0.32 A
|
|
| Drain-source On Resistance-Max |
4 Ω
|
100 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| JESD-30 Code |
R-PSIP-W3
|
O-PBCY-T3
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
IN-LINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
TIN LEAD
|
| Terminal Form |
WIRE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
20
|
| Pbfree Code |
|
No
|
| Feedback Cap-Max (Crss) |
|
4 pF
|
| JEDEC-95 Code |
|
TO-92
|
| Power Dissipation-Max (Abs) |
|
0.31 W
|
|
|
|
Compare ZVN2110ASTOA with alternatives
Compare 2N5640 with alternatives