ZVN2106E
vs
VQ1001J
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ZETEX PLC
|
TEMIC SEMICONDUCTORS
|
| Package Description |
IN-LINE, R-PDIP-T14
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SEPARATE, 4 ELEMENTS
|
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
30 V
|
| Drain Current-Max (ID) |
0.45 A
|
0.83 A
|
| Drain-source On Resistance-Max |
2 Ω
|
1 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDIP-T14
|
R-PDIP-T14
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
4
|
4
|
| Number of Terminals |
14
|
14
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.85 W
|
|
| Pulsed Drain Current-Max (IDM) |
3 A
|
3 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Additional Feature |
|
FAST SWITCHING, LOGIC LEVEL COMPATIBLE
|
|
|
|
Compare ZVN2106E with alternatives
Compare VQ1001J with alternatives