Z0110MN vs BT134W-600-T feature comparison

Z0110MN STMicroelectronics

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BT134W-600-T NXP Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS NXP SEMICONDUCTORS
Package Description PLASTIC PACKAGE-4 SMALL OUTLINE, R-PDSO-G4
Pin Count 4 4
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.30.00.80
Samacsys Manufacturer STMicroelectronics
Additional Feature SENSITIVE GATE
Case Connection MAIN TERMINAL 2 MAIN TERMINAL 2
Configuration SINGLE SINGLE
Critical Rate of Rise of Commutation Voltage-Min 5 V/us
DC Gate Trigger Current-Max 25 mA 35 mA
DC Gate Trigger Voltage-Max 1.5 V 1.5 V
Holding Current-Max 25 mA 15 mA
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Leakage Current-Max 0.01 mA
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
RMS On-state Current-Max 1 A 1 A
Repetitive Peak Off-state Voltage 600 V 600 V
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Trigger Device Type 4 QUADRANT LOGIC LEVEL TRIAC 4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches 5 3
Critical Rate of Rise of Off-State Voltage-Min 100 V/us
Repetitive Peak Off-state Leakage Current-Max 500 µA

Compare Z0110MN with alternatives

Compare BT134W-600-T with alternatives