Z0109MA0,412
vs
MBR170
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
DIGITRON SEMICONDUCTORS
|
| Part Package Code |
TO-92
|
|
| Package Description |
,
|
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
SOT54
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| HTS Code |
8541.30.00.80
|
8541.10.00.80
|
| Critical Rate of Rise of Commutation Voltage-Min |
2 V/us
|
|
| Critical Rate of Rise of Off-State Voltage-Min |
120 V/us
|
|
| DC Gate Trigger Current-Max |
10 mA
|
|
| DC Gate Trigger Voltage-Max |
1.3 V
|
|
| Holding Current-Max |
10 mA
|
|
| JESD-609 Code |
e3
|
e0
|
| Leakage Current-Max |
0.5 mA
|
|
| Moisture Sensitivity Level |
1
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-40 °C
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
260
|
|
| RMS On-state Current-Max |
1 A
|
|
| Repetitive Peak Off-state Voltage |
600 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN
|
TIN LEAD
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Trigger Device Type |
TRIAC
|
|
| Base Number Matches |
2
|
4
|
| ECCN Code |
|
EAR99
|
| Application |
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
|
70 V
|
| Case Connection |
|
ISOLATED
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Diode Type |
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
|
0.79 V
|
| JEDEC-95 Code |
|
DO-41
|
| JESD-30 Code |
|
O-XALF-W2
|
| Non-rep Pk Forward Current-Max |
|
50 A
|
| Number of Elements |
|
1
|
| Number of Phases |
|
1
|
| Number of Terminals |
|
2
|
| Output Current-Max |
|
1 A
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
|
70 V
|
| Reverse Current-Max |
|
500 µA
|
| Reverse Test Voltage |
|
70 V
|
| Technology |
|
SCHOTTKY
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
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