YTF840
vs
IRF840A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
TOSHIBA CORP
SAMSUNG SEMICONDUCTOR INC
Package Description
FLANGE MOUNT, R-PSFM-T3
TO-220, 3 PIN
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
8 A
8 A
Drain-source On Resistance-Max
0.85 Ω
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
32 A
32 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
8
Part Package Code
SFM
Pin Count
3
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
640 mJ
Feedback Cap-Max (Crss)
75 pF
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
134 W
Power Dissipation-Max (Abs)
134 W
Turn-off Time-Max (toff)
245 ns
Turn-on Time-Max (ton)
100 ns
Compare YTF840 with alternatives
Compare IRF840A with alternatives