WV3HG2128M64EEU403D4MG
vs
W3HG2128M64EEU534XD4ISG
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Part Package Code |
SODIMM
|
SODIMM
|
| Package Description |
DIMM,
|
DIMM,
|
| Pin Count |
200
|
200
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.36
|
8542.32.00.36
|
| Access Mode |
DUAL BANK PAGE BURST
|
DUAL BANK PAGE BURST
|
| Access Time-Max |
0.6 ns
|
0.5 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-XZMA-N200
|
R-XZMA-N200
|
| JESD-609 Code |
e4
|
e4
|
| Memory Density |
17179869184 bit
|
17179869184 bit
|
| Memory IC Type |
DDR DRAM MODULE
|
DDR DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
200
|
200
|
| Number of Words |
268435456 words
|
268435456 words
|
| Number of Words Code |
256000000
|
256000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
256MX64
|
256MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Code |
DIMM
|
DIMM
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
INDUSTRIAL
|
| Terminal Finish |
GOLD
|
GOLD
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
ZIG-ZAG
|
ZIG-ZAG
|
| Base Number Matches |
2
|
2
|
|
|
|
Compare WV3HG2128M64EEU403D4MG with alternatives
Compare W3HG2128M64EEU534XD4ISG with alternatives