WV3HG128M72EEU806PD4SG vs M485L2829CU0-LA2 feature comparison

WV3HG128M72EEU806PD4SG Microsemi Corporation

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M485L2829CU0-LA2 Samsung Semiconductor

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code SODIMM MODULE
Package Description DIMM, DIMM, DIMM200,24
Pin Count 200 200
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XZMA-N200 R-XDMA-N200
JESD-609 Code e4
Memory Density 9663676416 bit 9663676416 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min
Organization 128MX72 128MX72
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 2.7 V
Supply Voltage-Min (Vsup) 1.7 V 2.3 V
Supply Voltage-Nom (Vsup) 1.8 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER COMMERCIAL
Terminal Finish GOLD
Terminal Form NO LEAD NO LEAD
Terminal Position ZIG-ZAG DUAL
Base Number Matches 2 1
Access Time-Max 0.75 ns
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Output Characteristics 3-STATE
Package Equivalence Code DIMM200,24
Peak Reflow Temperature (Cel) NOT SPECIFIED
Refresh Cycles 8192
Supply Current-Max 3.33 mA
Terminal Pitch 0.6 mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare WV3HG128M72EEU806PD4SG with alternatives

Compare M485L2829CU0-LA2 with alternatives