WS7.0P6SMB vs P6SMB8.2AT3 feature comparison

WS7.0P6SMB Cyg Wayon Circuit Protection Co Ltd

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P6SMB8.2AT3 Motorola Semiconductor Products

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Rohs Code Yes No
Part Life Cycle Code Contact Manufacturer Transferred
Ihs Manufacturer CYG WAYON CIRCUIT PROTECTION CO LTD MOTOROLA INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.6 V 8.61 V
Breakdown Voltage-Min 7.78 V 7.79 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 7 V 7.02 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 4
Breakdown Voltage-Nom 8.2 V
Clamping Voltage-Max 12.1 V
JESD-609 Code e0
Qualification Status Not Qualified
Reverse Current-Max 200 µA
Terminal Finish Tin/Lead (Sn/Pb)

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