WS512K8-85CME
vs
EDI88512C85CB
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Package Description
,
0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
Reach Compliance Code
unknown
unknown
ECCN Code
3A001.A.2.C
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
85 ns
85 ns
JESD-30 Code
R-CDMA-T32
R-CDIP-T32
JESD-609 Code
e4
Memory Density
4194304 bit
4194304 bit
Memory IC Type
SRAM MODULE
STANDARD SRAM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
32
32
Number of Words
524288 words
524288 words
Number of Words Code
512000
512000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
512KX8
512KX8
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Finish
GOLD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
4
5
Part Package Code
DIP
Pin Count
32
Package Code
DIP
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Screening Level
MIL-STD-883
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
10.16 mm
Compare WS512K8-85CME with alternatives
Compare EDI88512C85CB with alternatives