WS512K8-35CQEA
vs
5962-9207807HXC
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Package Description |
,
|
DIP,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
35 ns
|
35 ns
|
| Additional Feature |
TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACK-UP
|
|
| JESD-30 Code |
R-CDMA-T32
|
R-XDIP-T32
|
| JESD-609 Code |
e0
|
e4
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
SRAM MODULE
|
SRAM MODULE
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
512KX8
|
512KX8
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
GOLD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
4
|
4
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
32
|
| Length |
|
40.64 mm
|
| Package Code |
|
DIP
|
| Screening Level |
|
MIL-STD-883
|
| Seated Height-Max |
|
5.08 mm
|
| Terminal Pitch |
|
2.54 mm
|
| Width |
|
15.24 mm
|
|
|
|
Compare WS512K8-35CQEA with alternatives
Compare 5962-9207807HXC with alternatives