WS26P6SMB vs 1SMB30ATR13 feature comparison

WS26P6SMB Cyg Wayon Circuit Protection Co Ltd

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1SMB30ATR13 Central Semiconductor Corp

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Rohs Code Yes No
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CYG WAYON CIRCUIT PROTECTION CO LTD CENTRAL SEMICONDUCTOR CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 31.9 V 38.3 V
Breakdown Voltage-Min 28.9 V 33.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Rep Pk Reverse Voltage-Max 26 V 30 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Pbfree Code No
Breakdown Voltage-Nom 35.8 V
Clamping Voltage-Max 48.4 V
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

Compare WS26P6SMB with alternatives

Compare 1SMB30ATR13 with alternatives