WME128K8-200DECEA
vs
WME128K8-200DEQEA
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
WHITE MICROELECTRONICS
|
MICROSEMI CORP
|
Package Description |
,
|
SOJ,
|
Reach Compliance Code |
unknown
|
compliant
|
Access Time-Max |
200 ns
|
200 ns
|
Additional Feature |
WRITE ENDURANCE 10000 CYCLES; 10 YEARS DATA RETENTION; HARDWARE AND SOFTWARE DATA PROTECTION
|
WRITE ENDURANCE 10000 CYCLES; 10 YEARS DATA RETENTION; HARDWARE AND SOFTWARE DATA PROTECTION
|
Data Retention Time-Min |
10
|
10
|
Endurance |
10000 Write/Erase Cycles
|
10000 Write/Erase Cycles
|
JESD-30 Code |
R-CDSO-J32
|
R-CDSO-J32
|
Memory Density |
1048576 bit
|
1048576 bit
|
Memory IC Type |
EEPROM
|
EEPROM
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
32
|
32
|
Number of Words |
131072 words
|
131072 words
|
Number of Words Code |
128000
|
128000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
125 °C
|
Operating Temperature-Min |
|
-55 °C
|
Organization |
128KX8
|
128KX8
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
5 V
|
5 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
MILITARY
|
Terminal Form |
J BEND
|
J BEND
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
3
|
3
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
ECCN Code |
|
3A001.A.2.C
|
HTS Code |
|
8542.32.00.51
|
Package Code |
|
SOJ
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Seated Height-Max |
|
3.96 mm
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Width |
|
11.23 mm
|
|
|
|
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