WME128K8-200CQ vs 5962-9315401HXX feature comparison

WME128K8-200CQ Microsemi Corporation

Buy Now Datasheet

5962-9315401HXX Microsemi Corporation

Buy Now Datasheet
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DIP DIP
Package Description 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 ,
Pin Count 32 32
Reach Compliance Code unknown compliant
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 200 ns 200 ns
Additional Feature HARDWARE AND SOFTWARE DATA PROTECTION 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION
JESD-30 Code R-CDIP-T32 R-CDIP-T32
JESD-609 Code e4
Memory Density 1048576 bit 1048576 bit
Memory IC Type EEPROM EEPROM MODULE
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 128KX8 128KX8
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Code DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Screening Level MIL-STD-883 MIL-STD-883
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish GOLD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.5 mm
Terminal Position DUAL DUAL
Write Cycle Time-Max (tWC) 10 ms 10 ms
Base Number Matches 4 1
Data Retention Time-Min 10
Endurance 10000 Write/Erase Cycles

Compare WME128K8-200CQ with alternatives

Compare 5962-9315401HXX with alternatives