W631GG8MB-12 vs K4B1G0846F-HCK0 feature comparison

W631GG8MB-12 Winbond Electronics Corp

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K4B1G0846F-HCK0 Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer WINBOND ELECTRONICS CORP SAMSUNG SEMICONDUCTOR INC
Package Description VFBGA-78 FBGA, BGA78,9X13,32
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Date Of Intro 2017-12-01
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B78 R-PBGA-B78
Length 10.5 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR DRAM DDR3 DRAM
Memory Width 8 8
Number of Functions 1
Number of Ports 1
Number of Terminals 78 78
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min
Organization 128MX8 128MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VFBGA FBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Seated Height-Max 1 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.575 V
Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm
Base Number Matches 1 1
Pbfree Code Yes
Access Time-Max 0.225 ns
Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON
Interleaved Burst Length 8
JESD-609 Code e1
Moisture Sensitivity Level 3
Output Characteristics 3-STATE
Package Equivalence Code BGA78,9X13,32
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 8
Supply Current-Max 0.18 mA
Terminal Finish TIN SILVER COPPER

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