W3HG2128M64EEU403D4ISG vs M470T5663FB3-CE7 feature comparison

W3HG2128M64EEU403D4ISG Microsemi Corporation

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M470T5663FB3-CE7 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE MODULE
Package Description , DIMM, DIMM200,24
Pin Count 200 200
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode MULTI BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 0.6 ns 0.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N200 R-XDMA-N200
JESD-609 Code e4
Memory Density 17179869184 bit 17179869184 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 268435456 words 268435456 words
Number of Words Code 256000000 256000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C
Organization 256MX64 256MX64
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL OTHER
Terminal Finish GOLD
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Base Number Matches 2 1
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Length 67.6 mm
Output Characteristics 3-STATE
Package Code DIMM
Package Equivalence Code DIMM200,24
Peak Reflow Temperature (Cel) 260
Refresh Cycles 8192
Seated Height-Max 30.15 mm
Standby Current-Max 0.16 A
Supply Current-Max 1.48 mA
Terminal Pitch 0.6 mm

Compare W3HG2128M64EEU403D4ISG with alternatives

Compare M470T5663FB3-CE7 with alternatives