W3EG72125S262AJD3SG vs M312L2923CUS-CB3 feature comparison

W3EG72125S262AJD3SG Microsemi Corporation

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M312L2923CUS-CB3 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM, DIMM184
Pin Count 184 184
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.75 ns 0.7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N184 R-XDMA-N184
Memory Density 9663676416 bit 9663676416 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX72 128MX72
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 1
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Output Characteristics 3-STATE
Package Equivalence Code DIMM184
Refresh Cycles 8192
Supply Current-Max 4.52 mA
Terminal Pitch 1.27 mm

Compare W3EG72125S262AJD3SG with alternatives

Compare M312L2923CUS-CB3 with alternatives