W3EG2128M72AFSR263AD3S vs M312L5628CU0-CA2 feature comparison

W3EG2128M72AFSR263AD3S Microsemi Corporation

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M312L5628CU0-CA2 Samsung Semiconductor

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM, DIMM184
Pin Count 184 184
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N184 R-XDMA-N184
Memory Density 19327352832 bit 19327352832 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 72 72
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 268435456 words 268435456 words
Number of Words Code 256000000 256000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 256MX72 256MX72
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 1
Access Time-Max 0.75 ns
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Output Characteristics 3-STATE
Package Equivalence Code DIMM184
Refresh Cycles 8192
Supply Current-Max 7.54 mA
Terminal Pitch 1.27 mm

Compare W3EG2128M72AFSR263AD3S with alternatives

Compare M312L5628CU0-CA2 with alternatives