W3E64M16S-266NBC vs K4X1G163PC-FEC30 feature comparison

W3E64M16S-266NBC Microsemi Corporation

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K4X1G163PC-FEC30 Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description LBGA, VFBGA, BGA60,9X10,32
Pin Count 60 60
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.75 ns 6 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60 R-PBGA-B60
Length 12.5 mm 11.5 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR DRAM DDR1 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 60 60
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -25 °C
Organization 64MX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.5 mm 1 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.7 V 1.95 V
Supply Voltage-Min (Vsup) 2.3 V 1.7 V
Supply Voltage-Nom (Vsup) 2.5 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL OTHER
Terminal Form BALL BALL
Terminal Pitch 1 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 10 mm 11 mm
Base Number Matches 2 1
Rohs Code Yes
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8,16
Output Characteristics 3-STATE
Package Equivalence Code BGA60,9X10,32
Peak Reflow Temperature (Cel) NOT SPECIFIED
Refresh Cycles 8192
Sequential Burst Length 2,4,8,16
Standby Current-Max 0.000025 A
Supply Current-Max 0.135 mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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