W08M-G
vs
W08M
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
JGD SEMICONDUCTORS CO LTD
|
| Package Description |
O-PBCY-W4
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Breakdown Voltage-Min |
800 V
|
800 V
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1.1 V
|
| JESD-30 Code |
O-PBCY-W4
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
40 A
|
30 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
|
| Output Current-Max |
1.5 A
|
1.5 A
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
BOTTOM
|
|
| Base Number Matches |
2
|
50
|
| Operating Temperature-Max |
|
125 °C
|
|
|
|
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