W08M
vs
W08M-G
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
JGD SEMICONDUCTORS CO LTD
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Min |
800 V
|
800 V
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1 V
|
| Non-rep Pk Forward Current-Max |
30 A
|
40 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
125 °C
|
|
| Output Current-Max |
1.5 A
|
1.5 A
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
50
|
2
|
| Rohs Code |
|
Yes
|
| Package Description |
|
O-PBCY-W4
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
O-PBCY-W4
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
4
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
UL RECOGNIZED
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
|
|
|
Compare W08M-G with alternatives