VS12G422TDC-6
vs
MAC5101CS
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
GEC PLESSEY SEMICONDUCTORS
|
| Package Description |
DIP, DIP22,.4
|
DIP, DIP22,.4
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
6 ns
|
130 ns
|
| I/O Type |
SEPARATE
|
SEPARATE
|
| JESD-30 Code |
R-XDIP-T22
|
R-CDIP-T22
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
1024 bit
|
1024 bit
|
| Memory IC Type |
CACHE SRAM
|
STANDARD SRAM
|
| Memory Width |
4
|
4
|
| Number of Terminals |
22
|
22
|
| Number of Words |
256 words
|
256 words
|
| Number of Words Code |
256
|
256
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
256X4
|
256X4
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
CERAMIC
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP22,.4
|
DIP22,.4
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Power Supplies |
5 V
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Current-Max |
0.3 mA
|
0.015 mA
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
GAAS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
MILITARY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
4
|
| Length |
|
27.94 mm
|
| Number of Functions |
|
1
|
| Number of Ports |
|
1
|
| Output Enable |
|
YES
|
| Screening Level |
|
MIL-STD-883 Class S
|
| Seated Height-Max |
|
5.715 mm
|
| Standby Current-Max |
|
0.00075 A
|
| Standby Voltage-Min |
|
2 V
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
4.5 V
|
| Total Dose |
|
50k Rad(Si) V
|
| Width |
|
15.24 mm
|
|
|
|
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