VP0106N3
vs
VP0106N3P012
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TELCOM SEMICONDUCTOR INC
SUPERTEX INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
0.25 A
0.25 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
1 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Base Number Matches
2
1
HTS Code
8541.29.00.95
DS Breakdown Voltage-Min
60 V
Drain-source On Resistance-Max
8 Ω
Feedback Cap-Max (Crss)
8 pF
JEDEC-95 Code
TO-92
JESD-30 Code
O-PBCY-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
CYLINDRICAL
Power Dissipation Ambient-Max
1 W
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare VP0106N3 with alternatives
Compare VP0106N3P012 with alternatives