VNV35N07-E
vs
VNB35N07
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
STMICROELECTRONICS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G10
|
D2PAK-3/2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
STMicroelectronics
|
STMicroelectronics
|
| Configuration |
COMPLEX
|
COMPLEX
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain-source On Resistance-Max |
0.035 Ω
|
0.035 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G10
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
10
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
125 W
|
125 W
|
| Reference Standard |
AEC-Q101
|
AEC-Q101
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
1350 ns
|
1350 ns
|
| Turn-on Time-Max (ton) |
800 ns
|
800 ns
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
Yes
|
|
|
|
Compare VNV35N07-E with alternatives
Compare VNB35N07 with alternatives