VN2110N3P012
vs
RUE003N02TL
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SUPERTEX INC
ROHM CO LTD
Package Description
CYLINDRICAL, O-PBCY-T3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
20 V
Drain Current-Max (ID)
0.25 A
0.3 A
Drain-source On Resistance-Max
4 Ω
1.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
JEDEC-95 Code
TO-92
JESD-30 Code
O-PBCY-T3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
1 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
BOTTOM
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
Pin Count
3
Samacsys Manufacturer
ROHM Semiconductor
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
0.15 W
Terminal Finish
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
10
Compare VN2110N3P012 with alternatives
Compare RUE003N02TL with alternatives