VN1306N3P001
vs
SJVP0109N9
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SUPERTEX INC
SUPERTEX INC
Package Description
CYLINDRICAL, O-PBCY-T3
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
90 V
Drain Current-Max (ID)
0.25 A
0.25 A
Drain-source On Resistance-Max
8 Ω
8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
5 pF
8 pF
JEDEC-95 Code
TO-92
TO-52
JESD-30 Code
O-PBCY-T3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Power Dissipation Ambient-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Case Connection
DRAIN
Compare VN1306N3P001 with alternatives
Compare SJVP0109N9 with alternatives