VE47
vs
2W08G
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
FUJI ELECTRIC CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Min |
450 V
|
800 V
|
| Case Connection |
ISOLATED
|
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
1.1 V
|
| JESD-30 Code |
O-XBCY-W4
|
|
| Non-rep Pk Forward Current-Max |
25 A
|
60 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-50 °C
|
|
| Output Current-Max |
1 A
|
2 A
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Rep Pk Reverse Voltage-Max |
400 V
|
800 V
|
| Reverse Current-Max |
500 µA
|
|
| Reverse Test Voltage |
280 V
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
BOTTOM
|
|
| Base Number Matches |
4
|
24
|
| Pin Count |
|
4
|
| Manufacturer Package Code |
|
2W-G
|
| ECCN Code |
|
EAR99
|
|
|
|