VE16418165BTSA-6
vs
HB56HW164DB-7B
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
|
HITACHI LTD
|
| Part Package Code |
DIMM
|
DIMM
|
| Package Description |
,
|
,
|
| Pin Count |
168
|
144
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.02
|
8542.32.00.02
|
| Access Mode |
FAST PAGE WITH EDO
|
FAST PAGE WITH EDO
|
| Access Time-Max |
60 ns
|
70 ns
|
| Additional Feature |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
|
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
|
| Alternate Memory Width |
32
|
|
| JESD-30 Code |
R-XDMA-N168
|
R-XDMA-N144
|
| Memory Density |
67108864 bit
|
67108864 bit
|
| Memory IC Type |
EDO DRAM MODULE
|
EDO DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
168
|
144
|
| Number of Words |
1048576 words
|
1048576 words
|
| Number of Words Code |
1000000
|
1000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
1MX64
|
1MX64
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Refresh Cycles |
1024
|
4096
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
MOS
|
MOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare VE16418165BTSA-6 with alternatives
Compare HB56HW164DB-7B with alternatives