UZXMP3A17E6TC
vs
PMWD30UN,518
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
DIODES INC
NXP SEMICONDUCTORS
Part Package Code
SOT-23
TSSOP
Package Description
SMALL OUTLINE, R-PDSO-G6
SMALL OUTLINE, R-PDSO-G8
Pin Count
6
8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW THRESHOLD
Configuration
SINGLE WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
3.2 A
5 A
Drain-source On Resistance-Max
0.07 Ω
0.04 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
R-PDSO-G8
Number of Elements
1
2
Number of Terminals
6
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
JEDEC-95 Code
MO-153AB
Compare UZXMP3A17E6TC with alternatives
Compare PMWD30UN,518 with alternatives