UZXMN4A06G
vs
UZXMN4A06GTA
feature comparison
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
DIODES INC
|
ZETEX PLC
|
Part Package Code |
SOT-223
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SOT-223, 4 PIN
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
DRAIN
|
DS Breakdown Voltage-Min |
40 V
|
40 V
|
Drain Current-Max (ID) |
6.7 A
|
5 A
|
Drain-source On Resistance-Max |
0.075 Ω
|
0.05 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
1
|
Rohs Code |
|
Yes
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Pulsed Drain Current-Max (IDM) |
|
22 A
|
Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare UZXMN4A06G with alternatives
Compare UZXMN4A06GTA with alternatives