UT6J3TCR1 vs UT6J3TR feature comparison

UT6J3TCR1 ROHM Semiconductor

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UT6J3TR ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Package Description DFN2020-8D, 8 PIN SMALL OUTLINE, S-PDSO-N8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2019-12-09
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 0.6 mJ 0.6 mJ
Case Connection DRAIN DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 3 A 3 A
Drain-source On Resistance-Max 0.085 Ω 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N6 S-PDSO-N8
Number of Elements 2 2
Number of Terminals 6 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 12 A 12 A
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Moisture Sensitivity Level 1