USF32 vs 1N5809D3A-JQRS.L2D feature comparison

USF32 Galaxy Microelectronics

Buy Now Datasheet

1N5809D3A-JQRS.L2D TT Electronics Power and Hybrid / Semelab Limited

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD SEMELAB LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE ULTRA FAST RECOVERY POWER
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.92 V
JEDEC-95 Code DO-27
JESD-30 Code O-PALF-W2 R-CDSO-N2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.02 µs 0.05 µs
Surface Mount NO YES
Terminal Form WIRE NO LEAD
Terminal Position AXIAL DUAL
Base Number Matches 3 2
Package Description R-CDSO-N2
Pin Count 2
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Diode Element Material SILICON
JESD-609 Code e4
Operating Temperature-Min -65 °C
Terminal Finish GOLD

Compare USF32 with alternatives

Compare 1N5809D3A-JQRS.L2D with alternatives