US2D vs ES2DFSM3G feature comparison

US2D Galaxy Microelectronics

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ES2DFSM3G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code SMB
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 0.95 V
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 2 A 2 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 0.05 µs 0.035 µs
Surface Mount YES YES
Base Number Matches 14 1
HTS Code 8541.10.00.80
Date Of Intro 2020-04-15
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
Application EFFICIENCY
Diode Element Material SILICON
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reverse Current-Max 1 µA
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL

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